Oxygen segregation and microscopic inhomogeneity in Czochralski silicon.
01 January 1985
In this paper, the origins of the microscopic impurity inhomogeneity in Czochralski (CZ) silicon are reviewed. The relevance of impurity segregation behavior and microscopic growth rate variations to the impurity microfluctuations are analyzed and discussed. The observed microfluctuations in large diameter CZ silicon crystals are characteristically a result of convoluted growth rate fluctuations due to melt thermal asymmetry, thermal convection and forced pull rate variations induced by automatic diameter control.