Parameters for in-situ Growth of High T sub c Superconducting Thin Films Using an Oxygen Plasma Source.

Superconducting thin films of Dy-Ba-Cu-O have been grown on three inch sapphire wafers with an molecular beam deposition process. Dissociated oxygen from a glow discharge source was used to improve the oxygen incorporation. This allowed growth on a relatively low temperature substrate kept below 600C followed by an in situ anneal below 400C. Thin films of Dy-Ba-Cu-O which were fully superconducting at 40K have been fabricated by this in-situ growth process.