Parylene as a Passivation Layer for GaAs Devices

The evolution of very high speed electronic systems relies on developing materials with improved properties for integrated circuit applications, and the use of polymers in microelectronics applications has grown significantly during the past five years. Dielectrics such as silicon nitride or silicon dioxide have traditionally been used in GaAs integrated circuit processing as interlayer isolation between metallization layers, as capacitor dielectrics, and as final passivation of the GaAs integrated circuits to provide chemical and mechanical protection to the wafer surface.