Passivation of GaAs Using Gallium-Gadolinium Oxides

The role of Gd sub 2 O sub 3 is investigated in our previously discovered oxide films of Ga sub 2 O sub 3 (Gd sub 2 O sub 3) for GaAs surface passivation. Based on the systematic dependence of the dielectric properties of (Ga sub 2 O sub 3) sub (1-x) (Gd sub 2 O sub 3)x on the Gd (x) content, we showed that pure gallium oxide does not effectively passivate GaAs, and Gd sub 2 O sub 3 is a necessary component to stabilize the gallium oxides in the 3 sup + fully oxidized state due to the electropositive nature of Gd sup (+3). This gives rise to electrically insulating films of low leakage current and high electrical breakdown strength.