Passivation of Si Donors and DX Centers in AlGaAs by Hydrogen Plasma Exposure

The effect of hydrogen plasma exposure upon Si donors and DX centers in AlGaAs has been investigated by deep level transient spectroscopy and capacitance versus voltage measurements. Following exposure to a hydrogen plasma for 30 min at 250C, the shallow level and DX center activity are reduced by an order of magnitude throughout a 1.6micron thick layer of molecular beam epitaxial grown AlGaAs.