Patterned aluminum growth via excimer laser activated metal- organic chemical vapor deposition.

Excimer laser photolysis of organo-aluminum adlayers has been used to catalytically activate the deposition of Al via thermal decomposition of triisobutylaluminum. The process exhibits good spatial selectivity and patterns with 4 microns resolution have been accurately reproduced. Patterned Al metallizations have been performed on Si, Si0(2), Al(2)0(3) and GaAs substrates and show promise for practical applications. Electrical measurements probing Al/substrate interface quality indicate that this technique may be suitable for the fabrication of rectifying contacts on GaAs.