Performance and Advantages of BICFETS Versus HBT's

The BICFET is a new form of bipolar transistor which offers superior performance of III-V bipolar integrated circuits and several unique advantages over known approaches for opto-electronic integration. The BICFET does not have a base. Instead, the control (or biasing) charge is confined to the inversion channel at a heterojunction interface which is accessed by a source self-aligned to the emitter. The channel is induced by a charge sheet located in the depleted barrier section of the emitter. The mobility of the channel is high (and thus its resistance R sub in is low) because the narrow band semiconductor (NBGS) at the interface is undoped. The BICFET does not have charge storage or recombination in a neutral base and it has the potential for very high speed due its low input capacitance, and the enhanced carrier velocity in the collector.