Photoluminescence of (Al,Ga)As double heterostructure laser material containing a bufffer layer.

Room temperature photoluminescence on (Al,Ga) As double heterostructure laser material containing a buffer layer has been performed. While the radiative efficiency of the active layer is enhanced by 40% the effect is less than the factor of four previously reported. Differences may be related to the nature of he thermally damaged surface formed on the substrate during the pregrowth heat treatment, but our current growth technology does not require this step.