Photoluminescence study of exciton-optical phonon scattering in bulk GaAs and GaAs quantum wells
15 February 2000
We obtain the temperature dependence of the homogeneous linewidth of excitons in GaAs quantum wells (QWs) and bulk GaAs using photoluminescence measurements. The results indicate that exciton scattering rates with optical phonons are larger in bulk GaAs than in QWs. (C) 2000 American Institute of Physics. {[}S0021-8979(00)08304-3].