Photoluminescence study of the damage distribution in proton bombarded (Al,Ga)As-GaAs-(Al,Ga)As double heterostructure.

The damage distribution in proton bombarded (Al,Ga)As-GaAs- (Al,Ga)As double heterostructure was studied via changes in the photoluminescence intensity of the GaAs layer as a function of proton energy in the range 50-300keV for a constant flux of 3x10(15) protons/cm(2). The purpose of this work was to determine the optimum distance to place the end of range of protons above the active layer when protons are used to form the current confining stripe in (Al,Ga)As lasers.