Physical Modeling of LIGT Structures for Spice Simulation of Power Integrated Circuits

To enable CAD of smart power integrated circuits, new physical models for lateral HV/P devices, in particular LIGT structures, are developed and implemented in SPICE. The models are charge-based, and, via regional partitioning, account for the unique features of HV/P devices unaccounted for in conventional equivalent-circuit models. The implementation of the models in the circuit simulator is flexible and allows these features (e.g., multidimensional carrier flow, conductivity modulation, latch-up, transcapacitance) to be simulated without having to sacrifice much physics through excessive empiricism. Numerical two-dimensional device simulations (with PISCES) and test- device measurements support the modeling methodology and the model parameter extraction.