Picosecond OMVPE GaAs/Si sup O sub 2 Photoconductive Devices and Applications in Materials Characterization.

Preliminary experiments utilizing thin polycrystalline OMVPE GaAs/Si sup O sub 2 films, has resulted in photoconductive detectors with sampling oscilloscope limited responses of 35 psec (FWHM), photoconductive sampling impulse responses of 13 psec (FWHM), and signal levels exceeding 1.0 V into a 50- Ohm load. To our knowledge these bare the largest sampling oscilloscope limited responses ever reported for thin film polycrystalline semiconductor photodetectors. This photoconductor was then utilized as a pulsed electrical bias to neutralize the effects of dielectric relaxation evident in simple evaporated metal contacts on crystalline semiconductors.