Picosecond photoconductivity studies of light ion bombarded InP.

An investigation of the dependence of the photoconductive lifetime and dark resistivity on ion mass, bombarding dose and substrate temperature is presented for ion implanted Fe-doped InP. Be and He ion bombardments at low doses cause a slight decrease in the dark resistivity of the semi-insulating InP and introduce defects which act as efficient carrier recombination sites without impairing the free carrier mobility; above a threshold dose a second phase of damage is evidenced by a sharp decrease in carrier mobility and dark resistivity.