Picosecond Photorefractive Response of GaAs:EL2, InP:Fe and CdTe:V.
01 January 1989
Measurements and theoretical calculations are presented for the photorefractive effect in three semi-insulating semiconductors (GaAs:EL2, InP:Fe and CdTe:V) using 29-ps pulses at a wavelength of 1.06microns. The photorefractive gain is largest in crystal of CdTe and smallest in our sample of InP. The major differences between the materials responsible for this are the electro- optic coefficients, the mobilities, the absorption coefficients and the amount of electron-hole competition.