Properties of LPCVD aluminum films produced by disproportionation of aluminum monochloride.

This study describes the properties of LPCVD Al deposited by the disproportionation of AlCl on Si and SiO(2) substrates. In contrast to the organometallic LPCVD Al processes, this deposition technique offers advantages of a lower hazard potential and possibly the ability of simultaneously incorporating desired dopants such as Cu and or Si. The films exhibit, in local areas, signs of specularity reflecting the absence of the rough topographical structure typical of organometallic LPCVD Al processes. However, the problems associated with proper activation of the substrate remain at the present a stumbling block in the viability of this metallization process in VLSL manufacturing.