Quantum size effects in GaAs-GaAlAs quantum well wires and quantum well boxes.

Quantum well wires and QW-boxes have been realized in GaAs- GaAlAs single quantum wells grown by molecular beam epitaxy. Electron beam lithography, gallium ion implantation and rapid thermal annealing allow fabrication of arrays of QW-wires and QW-boxes by making use of the implantation enhanced interdiffusion of Ga an Al across the GaAs/GaAlAs interfaces. The kinetics of the interdiffusion is characterized by cathodoluminescence and transmission electron microscopy. The QW-wires and QW- boxes exhibit a series of new cathodoluminescence lines which are attributed to transitions from quantum states of electrons laterally confined in a graded potential.