Quantum-well modulators at 1.55 microns by single-step selective CBE growth
20 April 1992
In an effort to reduce the number of growth steps and increase device yield, we developed novel InGaAsP/InP quantum well electro-optic modulators based on single-step growth on masked substrates by chemical beam epitaxy (CBE). The operating wavelength of these devices are accurately tuned by controlling the CBE mask patterns.