Quarter-wave Bragg Reflector Stack of InP-In sub (0.53) Ga sub (0.47) As for 1.65microns Wavelength.

Quarter-wave semiconductor mirrors of InP-In sub (0.53) Ga sub (0.47) As for high reflectivity at 1.65microns wavelength are epitaxially grown using metalorganic chemical vapor deposition. Doping of the In sub (0.53) Ga sub (0.47) As layers is found to be critical for high reflectivity at wavelengths corresponding to the In sub (0.53) Ga sub (0.47) As band gap. N-type doping reduces the band to band absorption resulting in high reflectivity while p-type doped mirrors show reduced reflectivity.