Quasiballistic Resonant Tunneling of Minority Electrons into the Excited States of a Quantum Well

Ballistic transport of nonequilibrium electrons across the base of a bipolar transistor has attracted much attention in recent years due to its relevance in high speed electronics. Demonstration of quasiballistic electron transport in p doped GaAs has been made in the recent past using hot electron spectroscopy with a barrier analyzer in the base - collector junction. Alternatively, evidence of quasiballistic transport can be obtained by observing the energy dependent transmission of the injected electrons in a double barrier (DB) quantum well (QW) heterostructure placed in the base of a bipolar transistor.