RADIATION-ENHANCED DIFFUSION OF IMPLANTED IMPURITIES IN AMORPHOUS Si.

We have investigated radiation-enhanced diffusion of impurities implanted in amorphous Si. Results will be reported for Cu, Ag, Au, As, In, Sb, Fe and Pt bombarded with 2.5 Mev Ar in the temperature range 77-770K. At low temperatures an athermal diffusive process, probably due to ballistic mixing, is observed. At intermediate temperatures, for Cu, Ag and Au, the diffusion is noticeably enhanced over the usual thermal values and the process is thermally activated with activation energies in the range 0.25-0.4 eV. At higher temperatures pure thermal diffusion dominates. For the other impurities no radiation enhancement of the diffusion has been observed