Radiation-Induced Defect Centers in High-Purity GeO sub 2 Glass

Defect centers induced in GeO sub 2 glass by either 100-KeV x rays at 77 K or gamma rays at room temperature were studied by electron-spin resonance. The model of a single charged oxygen vacancy defect center for the GeE' center (g = 2.0012, g = 1.9945 ) was confirmed by the observation and computer simulation of the Ge hyperfine structure associated with this center. The evolution of the GeE', peroxy radical, and nonbridging oxygen hole centers were studied by isochronal thermal annealing.