Radiation recombination at dangling bonds in a-Si:H.
01 January 1984
New time-resolved luminescence measurements in annealed a-Si:H films confirm that the low energy luminescence band at 0.7 eV represents radiative recombination at dangling bond defects. A simple quantitative model is presented based on recombination between an electron trapped in a conduction band tail state and a hole trapped at a dangling bond which accounts for the optical and ODMR results.