Radiation test results on first silicon in the Design Against Radiation Effects (DARE) library

This paper describes the first use of a Radiation Hardened by Design (DARE: Design Against Radiation Effects) library for the UMC 180 nm CMOS six-layer metal technology in a telecom application specific integrated circuit (ASIC). An innovative adapted ``design for test{''} approach has been used to allow the evaluation of the behavior of this ASIC under radiation. Radiation tests results and conclusions on future use of this library are also presented.