Radiative and nonradiative lifetimes in n-type and p-type 1. 6 micron InGaAs.
01 January 1984
Radiative and nonradiative lifetimes were deduced from measurements of lifetime and efficiency in 1.6 micron InGaAs double heterostructure active layers. The nonradiative rate is interpreted as due to the Auger effect. We find that the dominant Auger rate involves holes. This Auger rate increases with wavelength, accounting for the decrease in the temperature coefficient T(o) with wavelength in InGaAsP material.