Raman study of thermally grown native oxide films on In(.9)Ga (.1)P.

The present study has examined the oxidation properties of the alloy In(.9)Ga(.1)P at temperatures of 545 and 650C. The small gallium addition increases the bandgap in the alloy ~ 50 meV over that of InP while strongly suppressing the rate of oxide film growth. At 545C Raman scattering shows that the native oxide film on the alloy still contains elemental phosphorus inclusions; however, for growth at 650C the oxide film remains smooth to the eye and the red phosphorus inclusions are not observed within the noise scatter in the data.