Rapid Thermal Annealing of Elevated Temperature Silicon Implants in InP.

Rapid thermal annealing of elevated temperature Si implants in InP is shown to result in higher donor activation and electron mobility with lower temperature - shorter anneal cycles than for room temperature implants. The reduced cycles (temperature below 800C with times of ~10 seconds) also result in process simplification with negligible thermal surface degradation and insignificant Si diffusion. The results are demonstrated with a dual energy implant scheme applicable to field effect transistors and with a single energy heavy dose implant useful for achieving low resistance contacts.