Rapid thermal annealing (RTA) of dopants implanted into preamorphized silicon.

TEM studies show the spanning dislocations move to the surface under thermal treatment, while the deep disorder remains to act as a getter region. The deep disorder is shown to getter F, or Au when Au is intentionally diffused from the wafer backside. The same kind of disorder correlates with limited diffusion behavior of B for BF+2 implants into crystalline Si.