Rapid Thermal Processing to Improve the Epitaxy of (100) Silicon on (1102) Sapphire
01 January 1987
The heteroepitaxial quality of (100) Si films on (1102) sapphire substrates (SOS) as measured by Rutherford Backscattering (RBS) is improved by a post deposition thermal treatment which brings the Si temperature above 1350C for a least several seconds. For 6000A (100) SOS films the RBS (sub)min at the front and back interfaces improved from the as-grown values of 10% and 54% to as low as 3.2% and 13% after the RTA. A model based on solid phase epitaxial regrowth from the front surface is proposed to account for these results.