RBS and Channeling Analysis of Buried Disilicide Layers Formed by Ion Implantation

Buried single-crystal disilicide layers can be formed by implantation and annealing of high doses of metal ions in silicon, a technique we call mesotaxy. We have used Rutherford backscattering and channeling analysis in conjunction with X-ray diffraction, and TEM measurements to study the lattice mismatch of the disilicide layer to the silicon host and its affect on the electrical transport properties. Results will be presented for a comparison of CoSi sub 2 layers formed in (100), (111) and (110) silicon substrates, and for hexagonal CrSi Sub 2 layers formed in (111) silicon.