Reactive Ion Beam Sputter Deposition of High-T sub c Oxide Thin Films

A sputter system utilizing three Kaufman ion sources has been adapted to the fabrication of high-T sub c YBa sub 2 Cu sub 3 O sub (x) thin films. Two of the sources are independently directed at metallic Y and Cu targets whereas the third source, which can be used for cleaning of the substrate and/or ion implantation during film growth, is directed at the substrate. The Ba flux is obtained from a resistively heated source which is controlled in a temperature feedback mode to give a constant deposition rate as measured by a quartz microbalance.