Real Space Transfer in Three-Terminal InGaAs/InAlAs/InGaAs Heterostructure Devices.

Three-terminal real-space-transfer devices CHINT (charge-injection transistor) and NERFET (negative-resistance FET) have been implemented in InGaAs/InAlAs/InGaAs heterostructure material. The use of non-alloyed contacts provides excellent ohmic contacts to the channel without compromising insulation from the second conducting layer. The observed negative differential resistance has a peak-to-valley ratio of 130 at room temperature and 210 at liquid helium.