Realization of 20 GHz directly modulated 1.55 /spl mu/m DFB lasers using partially strain compensated quantum wells structures

We have realized and compared fully strained and partially strain compensated GaInAsP/InP based QW structures for the fabrication of directly modulated 1.55 mum DFB lasers. Active region containing up to 10 quantum wells were achieved and characterized using High Resolution X-Ray Diffraction (HR-XRD) and photoluminescence mapping at room temperature. DFB lasers containing 6, 8 and 10 QWs were fabricated. Bandwidth up to 20 GHz was obtained at 150 mA operation