Recent Development of Molecular Beam Epitaxy (MBE) and its Applications

Molecular beam epitaxy (MBE) has the ability to prepare layered structures on an atomic scale which allows heterostructure interfaces to be modified resulting in an artificially structured material having a property which does not exist in nature. MBE can prepare a wide range of III-V, II-VI, IV-VI, Group IV, superconductors, metals and insulators. With 'band-structure engineering', a new generation of microwave and optoelectronic devices may be prepared.