Recent developments in the strained layer epitaxy of germanium- silicon alloys.

This paper provides a brief review of recent work on strained layer Ge(x)Si(1-x) including modeling of critical thicknesses for single layers and superlattices; calculations and measurements on strain induced alteration of alloy bandgap and heterostructure band alignment; and application to MODFET and 1.3micron photodetector devices.