Recombination enhanced defect annealing in n-InP.

The first example of recombination enhanced defect reactions in InP is reported. The major defect E(0.79 eV) introduced by high energy electron irradiation of p(+)n junctions, formed by Zn-doped epi-layers on undoped n-type substrates, is not observed with Schottky barrier structures on similar material. The defect exhibits a reduction in annealing activation energy from 1.3 eV under pure thermal annealing to 0.42 eV with minority carrier (hole) injection.