Reconstruction of (100) Silicon/Disilicide Interfaces.

A 2x1 reconstruction has been observed at the Si/NiSi2(100) and Si/CoSi2(100) interfaces. The reconstruction has been found in both ion-implanted (mesotaxial) material and in material grown by molecular beam epitaxy (MBE). The reconstruction is apparent in HREM images obtained from <110> cross sections and in transmission electron diffraction (TED) patterns from (100) orientation samples. We propose that the reconstruction is due to a layer of dimerised silicon atoms at the interface. We conclude that the 2x1 reconstruction is an equilibrium state of the silicon/disilicide(100) interface.