Reduction of fall times in Ga0.47In0.53As photoconductive receivers through back gating.

We have observed the reduction of fall times in Ga0.47In0.53As photoconductive receivers by applying a reverse back gate voltage. A reduction of fall times from 7 ns down to ~~ 1 ns has been obtained for a back gate voltage as low as 1.1 V. This is the first demonstration of a back gated photoconductive receiver operating in the 1.1 to 1.65micron range.