Reflective Amplified Modulator Operating at 40 Gbps up to 85ºC as Colorless Transceiver for Optical Access Networks (extended abstract)

In this paper we report a 40 Gb/s operation of Remote Amplified Modulator at the temperature up to 85ºC within the C- and L-band spectral ranges. The presented device was fabricated using indium phosphide (InP) monolithic integration platform which relies on AlGaInAs quantum well active material, gap engineering by Selective Area Growth and low-parasitic RC semi-insulating buried heterostructures. We investigated the high temperature operation capabilities of the device as well as chirp and Rayleigh scattering effects in a bidirectional transmission. This 40Gb/s remote amplified modulator could operate at fastest short sections of next-generation wavelength division multiplexing (WDM) optical access networks or in WDM routers as a part of colorless transceivers. Index Terms -- Remote amplified modulator, electroabsorption modulator, indium phosphide, optical access networks, photonic integrated circuit.