Relation of Resonant Raman Lineshape to Electronic Structure in Quantum Wells.

We demonstrate the importance of energy level structure and inter-subband exciton-phonon scattering processes in GaAs/AlGaAs quantum wells through analysis of the resonant Raman profile. In high-quality samples, the inter-subband exciton-LO phonon mechanism appears to dominate over impurity-mediated intrasubband processes.