Resonant level lifetime in GaAs/AlGaAs double-barrier structures in the consideration of GAMMA-X transfers.

We present a quantitative model to calculate the lifetime of quasi-bound states in the Ga sub (1-x) Al sub x As-GaAs-Ga sub (1-x) Al sub x As structure including consideration of GAMMA-X transfers. We found that when a GAMMA-like energy level approaches an X-like energy level at certain layer thickness, anticrossing of the GAMMA-X transition occurs and the lifetime of the state can be several orders larger than that of a pure GAMMA system.