Resonant PIN-FET receivers for lightwave subcarrier systems.

01 January 1988

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This paper describes a theoretical and experimental analysis of narrowband resonant PIN-FET receivers for subcarrier multiple- access-networks. We show how a small inductance can be used to optimize the coupling between the PIN and FET, over a range of microwave subcarrier frequencies, minimizing the frequency dependent thermal noise and leaving shot-noise and as the ultimate limitation. Shot-noise then establishes a fixed ratio of the total usable bandwidth to the minimum received power per channel which, for the binary FSK system considered, is 6.1 GHz/uW. A resonant PIN-FET receiver, designed to provide maximum sensitivity between 2.5 and 5.0 GHz, was constructed. The measured signal- to-noise ratio was in excellent agreement with that predicted by the noise analysis.