Resonant Zener Tunneling of Electrons Between Bound States in the Valence- and Conduction-Band Quantum Wells in a Multiple Quantum-Well Structure.

We report the observation of resonant tunneling effects at high applied fields in the reverse-bias current-voltage characteristic of a multiple quantum-well p-i-n structure. The Al sub (0. 48) In sub (0.52) As /Ga sub (0.47) In sub (0.53) As structure (grown by molecular beam epitaxy with 35 periods of 139angstrom barriers and 139angstrom wells) shows two steps in the dark current. These are associated with Zener tunneling of electrons across the band-gap from the lowest sub-band in a valence-band quantum well to the first and second sub-bands of an adjacent conduction-band well.