RHEED Intensity Oscillation during the Growth of GaAs by Chemical Beam Epitaxy.

The existence of reflection high energy electron diffraction intensity oscillation during CBE growth of GaAs in a wide temperature range supports a 2-dimensional island nucleation growth mechanism. While the recovery after growth is similar to that of solid source MBE, the damping behavior suggests that the surface diffusion of alkyl molecules plays an important role in the growth kinetics. The observation of Ga-induced intensity variation indicates the first monolayer of Ga grows 2-dimensionally and decomposition of triethylgallium is mostly a thermal process without site preference.