RIE gate-recessed (Al0.3Ga0.7)(0.5)In0.5P/InGaAs double doped-channel FETs using CHF3+BCl3 mixing plasma

BCl3+ CHF3 gas mixture for reactive ion etching process was used to the gate-recess of fabricating (Al0.3Ga0.7)(0.5)In0.5P quaternary heterostructure double doped-channel FET's (D-DCFET), where a high uniformity of V-th was achieved. With the merits of this wide bandgap (Al0.3Ga0.7)(0.5)In0.5P layer, microwave power performance of this heterostructure D-DCFET demonstrates a compatible performance for devices fabricated on AlGaAs/InGaAs heterostructures.