Room temperature CW operation of GaAsSb/GaAs VCSELs near 1.3 μ

Summary form only given. We report on the room temperature operation of optically pumped vertical-cavity surface-emitting lasers (VCSELs) based on GaAsSb/GaAs quantum wells (QWs). Continuous-wave (CW) operation with 200 μW maximum output power at ≅1.275 μm, as well as quasi-CW operation up to 1.29 μm, has been achieved. These are the first GaAsSb/GaAs QW VCSELs lasing near 1.3 μm. The maximum output power approaches communication requirements