ROOM TEMPERATURE CW OPERATION OF INAS/INP (100) QUANTUM DOTS BASED BURIED RIDGE STRIPE LASERS
08 May 2005
Fabrication of InAs QDs grown on (100) InP substrate by GSMBE is reported. We investigate the room temperature operation of QDs-based broad area and buried ridge stripe lasers emitting at 1.5 /spl mu/m (JTh, T0, OH).