Room temperature operation of hot electron transistors.

We demonstrate the first room temperature operation of a double heterojunction unipolar hot electron transistor. Our test structure has a current gain greater than 10 and a measured current drive capability in excess of 1200 Acm sup (-2). The device uses an indirect, wide bandgap AlSb sub (0.92) As (0.08) emitter and the transistor base is a 100angstroms wide InAs layer.