Round-Robin Study of Implants in Si and SiO sub 2 by SIMS, RBS, and NAA

At present SIMS is the analysis technique of choice for determination of contamination in SOI. Various workers have reported significantly different amounts of impurities in samples of the same 'vintage'. To address this issue, NIST has prepared a set of calibration samples. Each sample consists of a wafer half of which is covered with thick thermal oxide and half of which is bare silicon. Different wafers were implanted at 150 keV with sup C, sup 23 NA, sup 27 Al, sup 50 Cr, sup 54 Fe, and sup 63 Cu at nominal doses of 5x10 sup 14/cm sup 2 and 5x10 sup 15/cm sup 2.