Safe operation of CH sub 4/H sub 2 reactive ion etch process.

The Ch sub 4/H sub 2 process for reactive ion etching of III- V semiconductors is examined from a safety and health perspective, with emphasis on the etching of InP and InGaAsP. The primary hazardous condition is the generation of PH sub 3 and AsH sub 3 as etch products. We show, however, that the quantities generated are small compared to those used for vapor phase epitaxial growth of III-V semiconductors, and that the potential for operator exposure to PH sub 3 during wafer loading/unloading and vacuum pump maintenance is extremely low.