Scaled AlInAs/InGaAs and InP/InGaAs Heterostructure Bipolar Transistors

Superior transport properties in InGaAs and compatibility with long-wavelength 1.3-1.55microns photonic devices suggests that AlInGaAsP heterostructure bipolar transistors (HBTs) should outperform AlGaAs HBTs in high speed digital, optoelectronic, and microwave applications [1-3]. Here, we report on the results of Al sub .48 In sub .52 As/In sub .53 Ga sub .47 As and InP/In sub .53 Ga sub .47 As HBTs demonstrating near ideal lateral scaling and ultrahigh speed performance. The major focus of this talk will be on device physics issues inherent in this new technology.